Placeholder text

Semiconductor Process Reliability in Practice

Semiconductor Process Reliability in Practice

0 - Default Title
Description
Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product. Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes:- Basic device physics- Process flow for MOS manufacturing- Measurements useful for device reliability characterization- Hot carrier injection- Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)- Negative bias temperature instability- Plasma-induced damage- Electrostatic discharge protection of integrated circuits- Electromigration- Stress migration- Intermetal dielectric breakdown
Product details
Edition:
illustrated
Number of Pages:
622
Release Date:
2012-10-10
Publication Date:
2012-09-21
Publisher:
McGraw-Hill
Languages:
Original: English
ISBN10:
007175427X
ISBN13:
9780071754279
Weight:
1039 g
Height:
157 cm
Width:
235 cm
Thickness:
38 cm
Currently sold out