Determination of Deep Impurities in Silicon and Germanium by Infrared Photoconductivity (Classic Reprint)

Name: Determination of Deep Impurities in Silicon and Germanium by Infrared Photoconductivity (Classic Reprint)
Brand: Forgotten Books
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By Thurber, W. Robert

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Excerpt from Determination of Deep Impurities in Silicon and Germanium by Infrared Photoconductivity<br/><br/>The most direct method for determining the Optical absorption cross section of a particular impurity is measurement of the transmission of a specimen containing a known concentration of the impurity. Emmons [2] gives a discussion of the procedure with specific application to gallium in silicon at 20 K. Data are usually obtained as a function of wave length and at the temperature used for the photoconductivity measurements as the cross sections are generally wavelength and temperature dependent.

Product details

Binding:: Paperback
Number of Pages:: 24
Release Date:: 2018-09-02
Publication Date:: 2018-09-02
Publisher:: Forgotten Books
Languages:: Published: English, Original: English
ISBN10:: 1390404587
Weight:: 45 g

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