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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

Product Image: Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

0 - Default Title
Description
This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.
Product details
Edition:
1
Number of Pages:
144
Release Date:
2021-09-29
Publication Date:
2021-09-29
Publisher:
CRC Press
Languages:
Original: English
ISBN10:
0367554143
ISBN13:
9780367554149
GPSR Manufacturer Reference:
Weight:
388 g
Height:
161 cm
Width:
240 cm
Thickness:
13 cm
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