Placeholder text

Go to cart

Optimization of Electrical Parameters (CNTFET)

By Krishna Pal

Optimization of Electrical Parameters (CNTFET)

By Krishna Pal

0 - Default Title
Description
In the sector of electronics, the demand for technological improvement has been steadilyincreasing. Until now, silicon has been the most popular material for addressing currentdemands. However, silicon has its own set of limits; silicon-based integrated circuits andthe scaling of silicon MOSFET design confront issues such as tunnelling effect, gate oxidethickness impact, and so on, which has prompted the development of alternative materials.The expanding academic interest in carbon nanotubes (CNTs) as a possible new type ofelectronic material has resulted in substantial advances in CNT physics, including ballisticand non-ballistic electron transport properties. Low bias transport in a nanotube can benearly ballistic across distances of several hundred nanometers. Extended circuit-levelmodels that can capture both ballistic and non-ballistic electron transport phenomena,including elastic, phonon scattering, strain, and tunnelling effects, have been created fornon-ballistic CNT transistors. The effect of gate oxide thickness on the performance ofnon-ballistic CNTFETs was investigated in our results section.
Product details
Binding:
Paperback
Number of Pages:
68
Release Date:
2025-10-08
Publication Date:
2025-10-08
Publisher:
LAP LAMBERT Academic Publishing
Languages:
Original: English
ISBN10:
6138263340
ISBN13:
9786138263340
GPSR Manufacturer Reference:
[email protected]
Weight:
119 g
Height:
150 cm
Width:
220 cm
Thickness:
5 cm
Buy on Amazon
Currently sold out