The Fundamentals Of Tri-layered HOI MOSFET In Nano Regime

Name: The Fundamentals Of Tri-layered HOI MOSFET In Nano Regime
Brand: LAP LAMBERT Academic Publishing
Availability: OutOfStock
Rating: 5 (1 reviews)

By Lalthanpuii Khiangte

0 - Default Title

Description

This book focuses in the development of a novel structure that can be in corporate to form a device with two strained Si layers in the channel region forming tri-layered strained channel heterostructure on insulator (HOI) nano-MOS system, which can be implemented to form a NanoFET. The heterostructure channel based on NanoFET consisting of mobility enriched double strained Si layers sandwiching the strained SiGe in between significantly enhances electron mobility in comparison to the conventional device of s-Si on relaxed SiGe channel MOSFET, leading to improved device performance without implementing any additional scaling.

Product details

Binding:: Paperback
Number of Pages:: 120
Release Date:: 2025-10-09
Publication Date:: 2025-10-09
Publisher:: LAP LAMBERT Academic Publishing
Languages:: Original: English
ISBN10:: 6209039553
ISBN13:: 9786209039553
GPSR Manufacturer Reference:: [email protected]
Weight:: 197 g
Height:: 15 cm
Width:: 22 cm
Thickness:: 0.8 cm

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