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Silicon Carbide Power Devices

By Yuan Gao

Silicon Carbide Power Devices

By Yuan Gao

0 - Default Title
Description
Fundamentals of Power Semiconductor Devices.- SiC Diode Main Characteristics.- Interpretation, Testing, and Application of SiC MOSFET Parameters.- Comparison of SiC and Si Device Characteristics.- Double-Pulse Test.- SiC Device Testing and Failure Analysis Techniques.- High di/dt Effects and Countermeasures - Turn-off Voltage Overshoot.- Effects and Mitigation of High dv/dt - Crosstalk.- Impact and Countermeasures of High dv/dt - Common Mode Current.- Effects and Countermeasures of Common Source Inductance.- Drive Circuit.- Main Applications of SiC Devices.
Product details
Number of Pages:
704
Release Date:
2025-09-01
Publication Date:
2025-09-01
Publisher:
Springer
Languages:
Original: English
ISBN10:
9819634792
ISBN13:
9789819634798
GPSR Manufacturer Reference:
[email protected]
Weight:
1335 g
Height:
160 cm
Width:
241 cm
Thickness:
41 cm
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