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Charge Plasma Induced Double Gate TFET as Biosensor

By Dipshika Das

Product Image: Charge Plasma Induced Double Gate TFET as Biosensor

Charge Plasma Induced Double Gate TFET as Biosensor

By Dipshika Das

0 - Default Title
Description
This book presents a groundbreaking Dual Metal Double Gate Tunnel Field Effect Transistor (DM DG TFET) featuring a laterally divided dielectric gate oxide structure with a tunneling and auxiliary gate. By engineering gate oxides and work functions, the device achieves a sub-threshold swing below 90 mV/decade, high current ratio, and ultra-low OFF current. It explores the role of high-k dielectrics, doping, and gate potentials in optimizing performance. The research further introduces a charge plasma-based TFET for label-free biomolecule detection, demonstrating exceptional drain sensitivity and RF response. A Heterojunction Ferroelectric Charge Plasma TFET design enhances switching speed and biosensing accuracy. Bridging innovation with simulation, this work establishes TFETs as key components for next-generation electronics and biosensing technologies.
Product details
Binding:
Paperback
Number of Pages:
172
Release Date:
2025-05-08
Publication Date:
2025-05-08
Publisher:
LAP LAMBERT Academic Publishing
Languages:
Original: English
ISBN10:
6208011906
ISBN13:
9786208011901
GPSR Manufacturer Reference:
[email protected]
Weight:
274 g
Height:
150 cm
Width:
220 cm
Thickness:
11 cm
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