Placeholder text

Go to cart

Radiation Effects of Advanced Electronic Devices and Circuits

By Chang Cai

Radiation Effects of Advanced Electronic Devices and Circuits

By Chang Cai

0 - Default Title
Description
Responding to the critical demands for radiation-hardened space electronics, this Reprint synthesizes cutting-edge advances in radiation effects research across advanced semiconductor technologies. It addresses dual industry challenges posed by escalating radiation susceptibility from device scaling and the urgent need for new evaluation paradigms in radiation hardness assurance for complex electronic systems. The Reprint features pioneering research on CNN accelerators for aerospace computing, gallium nitride (GaN) High Electron Mobility Transistors (HEMTs), high-barrier beta-gallium oxide (ß-GäO¿) Schottky Barrier Diodes (SBDs), silicon MOSFETs, and indium phosphide Heterojunction Bipolar Transistors (InP HBTs), collectively advancing radiation hardening methodologies and reliability assessment. By presenting novel hardening strategies with breakthrough radiation mitigation solutions, it delivers essential insights for navigating evolving challenges while positioning itself as a vital resource for advancing radiation tolerance electronics innovation.
Product details
Number of Pages:
186
Release Date:
2025-08-20
Publication Date:
2025-08-20
Publisher:
MDPI AG
Languages:
Original: English
ISBN10:
3725848335
ISBN13:
9783725848331
Weight:
665 g
Height:
175 cm
Width:
250 cm
Thickness:
17 cm
Buy on Amazon
Currently sold out