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Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors
Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors
0 - Default Title
Product details
- Binding:
- Paperback
- Edition:
- 1
- Number of Pages:
- 214
- Release Date:
- 2022-02-08
- Publication Date:
- 2022-02-08
- Publisher:
- BoD – Books on Demand
- Languages:
- Published: English, Original: English
- ISBN10:
- 3755708523
- Weight:
- 259 g
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