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Development, Design and Analysis of Type-II Hetero-Strained Nanosystem

By Rasmita Barik

Development, Design and Analysis of Type-II Hetero-Strained Nanosystem

By Rasmita Barik

0 - Default Title
Description
This book investigates the advancement and analysis of strained channel cylindrical gate-all-around (CGAA) FETs. The study explores a nano-scale design incorporating three ultrathin strained layers: two outer layers of strained silicon (s-Si) and a middle layer of strained silicon germanium (s-SiGe), forming a heterostructure-on-insulator (HOI) within the CGAA FET. These strained layers in the channel effectively confine quantum carriers, thereby enhancing carrier mobility and reducing threshold voltage roll-off.
Product details
Binding:
Paperback
Number of Pages:
180
Release Date:
2025-09-29
Publication Date:
2025-09-29
Publisher:
LAP LAMBERT Academic Publishing
Languages:
Original: English
ISBN10:
6200381585
ISBN13:
9786200381583
GPSR Manufacturer Reference:
[email protected]
Weight:
286 g
Height:
150 cm
Width:
220 cm
Thickness:
11 cm
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