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Formation and Properties of Dislocations during Crystal Growth of Bulk Silicon Carbide by the Physical Vapor Transport Method (Berichte aus der Halbleitertechnik)
Formation and Properties of Dislocations during Crystal Growth of Bulk Silicon Carbide by the Physical Vapor Transport Method (Berichte aus der Halbleitertechnik)
0 - Default Title
Product details
- Binding:
- Paperback
- Edition:
- 1
- Number of Pages:
- 155
- Release Date:
- 2008-08-01
- Publication Date:
- 2008-08-01
- Publisher:
- Shaker
- Languages:
- Published: English, Original: English
- ISBN10:
- 3832274243
- Weight:
- 233 g
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