Placeholder text

Go to cart

Wide Bandgap Semiconductor Based Micro/Nano Devices

By Jung-Hun Seo

Product Image: Wide Bandgap Semiconductor Based Micro/Nano Devices

Wide Bandgap Semiconductor Based Micro/Nano Devices

By Jung-Hun Seo

0 - Default Title
Description
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
Product details
Binding:
Paperback
Number of Pages:
138
Release Date:
2019-04-25
Publication Date:
2019-04-25
Publisher:
MDPI AG
Languages:
Original: English
ISBN10:
3038978426
ISBN13:
9783038978428
GPSR Manufacturer Reference:
[email protected]
Weight:
367 g
Height:
170 cm
Width:
244 cm
Thickness:
9 cm
Buy on Amazon
Currently sold out